NTMFS5832NLT1G datasheet

Маркировка

NTMFS5832NLT1G
Производитель

ON Semiconductor
Описание

ON Semiconductor NTMFS5832NLT1G Current - Continuous Drain (id) @ 25?° C: 20A Drain To Source Voltage (vdss): 40V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 51nC @ 10V Input Capacitance (ciss) @ Vds: 2700pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: * Package / Case: * Power - Max: 3.1W Rds On (max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Series: - Vgs(th) (max) @ Id: 3V @ 250?µA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 40 V Continuous Drain Current: 20 A Resistance Drain-Source RDS (on): 6.5 mOhms Mounting Style: SMD/SMT Fall Time: 8 ns Forward Transconductance gFS (Max / Min): 21 S Gate Charge Qg: 25 nC Power Dissipation: 3.1 W Rise Time: 24 ns
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6 шт.
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